CVD graphene film on a silicon substrate with flint oxide

Graphene film obtained by CVD method (chemical vapor deposition: a mixture of methane, hydrogen and argon) on a silicon substrate / layer of silicon oxide (Si / SiO2) with a thickness of 285 nm or 90 nm.

Specifications

Grain size:> 20 microns

Transparency:> 97%

Coverage Area:> 99%

Thickness: <1 nm – one layer

Surface resistance: 500 – 800 Ohm / □

Mobility of charge carriers on SiO2: 1500 – 2500 cm2 / V ∙ s

Application

  • Catalysts
  • Supercapacitors
  • Solar panels
  • Graphene semiconductor chips
  • Conductive graphene film
  • Graphene materials for computer memory
  • Biomaterials
  • Transparent conductive coatings

37 514 

SKU: N/A Categories: ,
Graphene 4x4cm (16cm2), Substrate 5x5cm
514 
Graphene 2x2cm (4cm2), Substrate 3x3cm
173 
Graphene 1x1cm (1cm2), Substrate 1,2x1,2cm
37 
Graphene 4x4cm (16cm2), Substrate 5x5cm
514 
Graphene 2x2cm (4cm2), Substrate 3x3cm
173 
Graphene 1x1cm (1cm2), Substrate 1,2x1,2cm
37 

Additional information

Product

Si/Sio2 90nm, Si/Sio2 285nm

Size

Graphene 1x1cm (1cm2), Substrate 1,2×1,2cm, Graphene 2x2cm (4cm2), Substrate 3x3cm, Graphene 4x4cm (16cm2), Substrate 5x5cm