CVD graphene film on a silicon substrate with flint oxide

Graphene film obtained by CVD method (chemical vapor deposition: a mixture of methane, hydrogen and argon) on a silicon substrate / layer of silicon oxide (Si / SiO2) with a thickness of 285 nm or 90 nm.

Specifications

Grain size:> 20 microns

Transparency:> 97%

Coverage Area:> 99%

Thickness: <1 nm – one layer

Surface resistance: 500 – 800 Ohm / □

Mobility of charge carriers on SiO2: 1500 – 2500 cm2 / V ∙ s

Application

  • Catalysts
  • Supercapacitors
  • Solar panels
  • Graphene semiconductor chips
  • Conductive graphene film
  • Graphene materials for computer memory
  • Biomaterials
  • Transparent conductive coatings

$40.00$564.00

SKU: N/A Category:
Graphene 4x4cm (16cm2), Substrate 5x5cm
$564.00
Graphene 2x2cm (4cm2), Substrate 3x3cm
$190.00
Graphene 1x1cm (1cm2), Substrate 1,2x1,2cm
$40.00
Graphene 4x4cm (16cm2), Substrate 5x5cm
$564.00
Graphene 2x2cm (4cm2), Substrate 3x3cm
$190.00
Graphene 1x1cm (1cm2), Substrate 1,2x1,2cm
$40.00

Additional information

Product

Si/Sio2 90nm, Si/Sio2 285nm

Size

Graphene 1x1cm (1cm2), Substrate 1,2×1,2cm, Graphene 2x2cm (4cm2), Substrate 3x3cm, Graphene 4x4cm (16cm2), Substrate 5x5cm

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