Additional information
| Product | Si/Sio2 90nm, Si/Sio2 285nm |
|---|---|
| Size | Graphene 1x1cm (1cm2), Substrate 1,2×1,2cm, Graphene 2x2cm (4cm2), Substrate 3x3cm, Graphene 4x4cm (16cm2), Substrate 5x5cm |
CVD graphene film on a silicon substrate with flint oxide
Graphene film obtained by CVD method (chemical vapor deposition: a mixture of methane, hydrogen and argon) on a silicon substrate / layer of silicon oxide (Si / SiO2) with a thickness of 285 nm or 90 nm.
Specifications
Grain size:> 20 microns
Transparency:> 97%
Coverage Area:> 99%
Thickness: <1 nm – one layer
Surface resistance: 500 – 800 Ohm / □
Mobility of charge carriers on SiO2: 1500 – 2500 cm2 / V ∙ s
Application
- Catalysts
- Supercapacitors
- Solar panels
- Graphene semiconductor chips
- Conductive graphene film
- Graphene materials for computer memory
- Biomaterials
- Transparent conductive coatings
37 € – 519 €
